a p1a003gmt-h f advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v so-8 compatible with heatsink r ds(on) 0.99m low on-resistance i d 260a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t a =25 a i d @t a =70 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 3 25 /w data and specifications subject to change without notice parameter drain-source voltage gate-source voltage thermal data 5 -55 to 150 pulsed drain current 1 300 storage temperature range 104 total power dissipation drain current, v gs @ 10v 3 drain current (chip), v gs @ 10v 4 201311181 1 parameter total power dissipation operating junction temperature range 260 -55 to 150 drain current, v gs @ 10v 3 rating 30 + 20 57 halogen-free product 46 ap1a003 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the pmpak ? 5x6 package is special for dc-dc converters application and the foot print is compatible with so-8 with backside heat sink and lower profile. g d s s s s g pmpak ? 5 x 6 d d d d
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =25a - - 0.99 m v gs =5v, i d =25a - - 2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =25a - 75 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =25a - 70 112 nc q gs gate-source charge v ds =15v - 30 - nc q gd gate-drain ("miller") charge v gs =4.5v - 30 - nc t d(on) turn-on delay time v ds =15v - 25 - ns t r rise time i d =1a - 15 - ns t d(off) turn-off delay time r g =3.3 - 100 - ns t f fall time v gs =10v - 60 - ns c iss input capacitance v gs =0v - 9800 15680 pf c oss output capacitance v ds =15v - 1070 - pf c rss reverse transfer capacitance f=1.0mhz - 710 - pf r g gate resistance f=1.0mhz - 1.1 2.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 40 - ns q rr reverse recovery charge di/dt=100a/s - 35 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec, 60 o c/w at steady state. 4.package limitation current is 60a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP1A003GMT-HF
a p1a003gmt-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 50 100 150 200 250 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c =25 o c 0 40 80 120 160 200 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.8 1 1.2 1.4 1.6 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =25a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =25a v g =10v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
ap1a003gmt-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. gate charge waveform temperature 4 0 2 4 6 8 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =25a v ds =15v 0 4000 8000 12000 16000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 100 200 300 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) q v g 4.5v q gs q gd q g charge limited by package
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